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irf520vspbf IRF520VLPBF hexfet ? power mosfet parameter typ. max. units r jc junction-to-case CCC 3.4 r ja junction-to-ambient ( pcb mounted, steady state )** CCC 40 thermal resistance www.irf.com 1 v dss = 100v r ds(on) = 0.165 ? i d = 9.6a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and thelowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surfacemount application. the through-hole version (irf520vl) is available for low-profile applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated optimized for smps applications lead-free description pd - 95484 absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 9.6 i d @ t c = 100c continuous drain current, v gs @ 10v 6.8 a i dm pulsed drain current 37 p d @t c = 25c power dissipation 44 w linear derating factor 0.29 w/c v gs gate-to-source voltage 20 v i ar avalanche current 9.2 a e ar repetitive avalanche energy 4.4 mj dv/dt peak diode recovery dv/dt 7.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c d 2 pak irf520vs to-262 irf520vl c/w downloaded from: http:///

2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 9.2a, v gs = 0v t rr reverse recovery time CCC 83 120 ns t j = 25c, i f = 9.2a q rr reverse recovery charge CCC 220 330 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 9.6 37 repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) starting t j = 25c, l = 1.0mh r g = 25 ? , i as = 9.2a, v gs =10v (see figure 12) i sd 9.2a di/d 360a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . uses irf520v data and test conditions. **when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.12 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.165 ? v gs = 10v, i d = 5.5a v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 1.9 CCC CCC s v ds = 50v, i d = 5.5a CCC CCC 25 a v ds = 100v, v gs = 0v CCC CCC 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 22 i d = 9.2a q gs gate-to-source charge CCC CCC 5.2 nc v ds = 80v q gd gate-to-drain ("miller") charge CCC CCC 7.0 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 6.9 CCC v dd = 50v t r rise time CCC 23 CCC i d = 9.2a t d(off) turn-off delay time CCC 30 CCC r g = 18 ? t f fall time CCC 24 CCC v gs = 10v, see fig. 10 between lead, CCC CCC 6mm (0.25in.)from package and center of die contact c iss input capacitance CCC 560 CCC v gs = 0v c oss output capacitance CCC 81 CCC v ds = 25v c rss reverse transfer capacitance CCC 10 CCC pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy CCC 150 44 mj i as = 9.2a, l = 1.0mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns

i dss drain-to-source leakage current downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 9.2a downloaded from: http:///

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 24 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 9.2a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f
1 0.1 %

+ -

25 50 75 100 125 150 17 5 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d downloaded from: http:///

6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ 25 50 75 100 125 150 175 0 20 40 60 80 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.8a 6.5a 9.2a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs downloaded from: http:///

www.irf.com 7
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ?

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8 www.irf.com

dimensions are shown in millimeters (inches) note: "p" in assembly line pos i ti on i ndi cates "l ead- f r ee" f 530s this is an irf530s with lot code 8024 as s e mb le d on ww 02, 2000 in the assembly line "l" as s e mb l y lot code int ernat ional rectifier logo part numbe r dat e code year 0 = 2000 we e k 02 line l f530s a = as s e mb l y s i t e code we e k 02 p = de s ignat e s l e ad- f r e e product (optional) rectifier international logo lot code as s e mb l y year 0 = 2000 dat e code part number downloaded from: http:///

www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) as s e mb l y lot code rectifier int ernat ional as s e mb le d on ww 19, 1997 note: "p" in ass embly line pos i ti on i ndi cates "l ead- f r ee" in t he as s embl y line "c" logo t his is an irl 3103l lot code 1789 example: line c dat e code we e k 19 ye ar 7 = 1997 part number part number logo lot code assembly int ernat ional rectifier product (optional) p = designates lead-free a = as s e mb l y s i t e code we e k 19 ye ar 7 = 1997 date code or downloaded from: http:///

10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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